<^.m.i-c.and\jiBLT53 features ? emitter-ballasting resistors for an optimum temperature profile ? gold metallization ensures excellent reliability ? withstands full load mismatch. description npn silicon planar epitaxial transistor encapsulated in a 4-lead sot122d studless envelope with a ceramic cap. it is designed for common emitter, class-b operation in portable radio transmitters in the 470 mhz communications band. all leads are isolated from the mounting flange. pinning-sot122d quick reference data rf performance at tmb = 25 "c in a common emitter test circuit. mode of operation c.w. class-b f (mhz) 470 vce (v) 7.5 pl (w) 8 gp (db) > 6 ilc (%) > 60 pin 1 2 3 4 description collector emitter base emitter warning product and environmental safety - toxic materials this product contains beryllium oxide. the product is entirely safe provided that the beo disc is not damaged. all persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. after use, dispose of as chemical or special waste according to the regulations applying at the location of the user. it must never be thrown out with the general or domestic waste. pin configuration fig.1 simplified outline and symbol. nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discoveyed in its use. ni semi-conductors encourages customers to verify that datasheets are current before placing orders.
limiting values in accordance with the absolute maximum system (iec 134), symbol vcbo vceo vebo ig, ic(av) icm plot tstg tj parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current total power dissipation storage temperature range junction operating temperature conditions open emitter open base open collector dc or average value peak value f > 1 mhz rf operation; tmb = 25 c min. - - - - - ? -65 - max. 20 10 3 2.5 7.5 35.5 150 200 unit v v v a a w -'c 1jc fig.2 dc soar. (1) continuous dc operation (2) continuous rf operation (f > 1 mhz), (3) short time operation during mismatch (f > 1 mhz), fig.3 power derating curve. thermal resistance symbol rth j-mb(rf) parameter from junction to mounting base conditions ptot = 35.5w; tmb = 25 jc max. 4.9 unit k/w
characteristics tj = 25 "c. symbol v(br)cbo v(br)ceo v(br)ebo ices hfe fr cc cre cc-mb parameter collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter leakage current dc current gain transition frequency collector capacitance feedback capacitance collector-mounting base capacitance conditions open emitter; ic = 20 ma open base; ic = 40 ma open collector; ie = 4 ma vbe = 0; vce = 1 0 v vce = 5 v; ic=1-2a vce = 7.5 v; ie=1.6a vcb = 7.5 v; le = le = 0; f= 1 mhz vce = 7.5 v; lc = 0; f= 1 mhz f= 1 mhz min. 20 10 3 - 25 - - typ. - - ? - - 3.9 24 17 1.2 max. - - - 1 - - - unit v v v ma ghz pf pf pf vce = 5v. fig.4 dc current gain as a function of collector current, typical values. 50 (pf) ; 40 ' 30 20 10 12 |e = ie= 0;f= 1 mhz fig.5 collector capacitance as a function of collector-base voltage, typical values.
q i" -d2 ? dimens unit mm ions(n a 417 327 illlimetre dimen b c 5,85 0.18 5.58 0.14 sions ai d 7.50 7.23 b derive d2 7,24 698 dfrom h 27.56 2578 0 he orig l 991 914 5 scale nal inch dimen' q a 1.58 1.27 80 10m ! .ions)
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